SiC power modules reduce inductance by half
12-08-2016 |
Mouser Electronics
|
Power
Stocked by Mouser, the ROHM Semiconductor SiC power modules are half bridge SiC modules that integrate a SiC SBD and SiC MOSFET into a single package. These modules provide high frequency through reduced switching loss.
These SiC power modules reduce inductance by half compared to similarly rated IGBT modules. This reduced inductance allows for devices rated at up to 300A. An integrated thermistor prevents excessive heat generation.
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