Power MOSFET lowers conduction and switching losses to increase efficiency

Vishay Intertechnology, Inc. has introduced its first fourth-generation 600V E Series power MOSFET in the new PowerPAK 8 x 8LR package to provide higher efficiency and power density for telecom, industrial, and computing applications. Compared to previous-generation devices, the Vishay Siliconix n-channel SiHR080N60E slashes on-resistance by 27% and resistance times gate charge, a key FOM for 600V MOSFETs used in power conversion applications, by 60% while delivering higher current in a smaller footprint than devices in the D²PAK package.

The company provides a comprehensive line of MOSFET technologies that support all stages of the power conversion process, from high-voltage inputs to the low-voltage outputs required to power the latest high-tech equipment. With the product and other devices in the fourth-generation 600V E Series family, the company addresses the necessity for efficiency and power density improvements in two of the first stages of the power system architecture – PFC and subsequent DC-DC converter blocks. Typical applications will include servers, edge computing, supercomputers, and data storage; UPS; HID lamps and fluorescent ballast lighting; telecom SMPS; solar inverters; welding equipment; induction heating; motor drives; and battery chargers.

Measuring 10.42mm x 8mm x 1.65mm, the device's compact PowerPAK 8 x 8LR package features a 50.8% smaller footprint than the D²PAK while supplying a 66% lower height. Due to its top-side cooling, the package produces excellent thermal capability, with an extremely low junction-to-case (drain) thermal resistance of 0.25C/W. This allows for 46% higher current than the D²PAK at the same on-resistance level, allowing dramatically higher power density. Also, the package's gullwing leads provide excellent temperature cycle capability.

Built on the company's latest energy-efficient E Series superjunction technology, the device features low typical on-resistance of 0.074-Ohm at 10V and ultra-low gate charge down to 42nC. The resulting FOM is an industry-low 3.1-Ohm*nC, which translates into reduced conduction and switching losses to save energy and increase efficiency in power systems >2kW. For improved switching performance in hard-switched topologies such as PFC, half-bridge, and two-switch forward designs, the MOSFET provides low typical effective output capacitances Co(er) and Co(tr) of 79pF and 499pF, respectively. The package also supplies a Kelvin connection for improved switching efficiency.

The device is RoHS-compliant and halogen-free. It is designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100 % UIS testing.