03-05-2019 | Microchip Technology | Power
Microchip, via its Microsemi subsidiary, has released a family of SiC power devices that provide proven ruggedness and the performance benefits of wide-bandgap technology. Complemented by the company's wide range of MCUs and analogue solutions, the SiC devices join an expanding family of reliable SiC products. These products satisfy the demand to improve system efficiency, robustness and power density in EVs and other high-power applications in the industrial, aerospace and defence markets.
The company's 700V SiC MOSFETs and 700V and 1200V SiC SBDs join its current portfolio of SiC power modules. The 35+ discrete products that have been added to their portfolio are offered in volume, backed by comprehensive development services, tools and reference designs, and providing exceptional ruggedness proven through rigorous testing. The extensive family of SiC die, discretes and power modules are available across a variety of voltage, current ratings and package types.
The company's SiC MOSFETs and SBDs allow more efficient switching at higher frequencies and pass ruggedness tests at levels deemed critical for ensuring long-term reliability. The company’s SiC SBDs perform approximately 20% better than other SiC diodes in these UIS ruggedness tests that gauge how well devices withstand degradation or premature failure under avalanche conditions, which happen when a voltage spike passes the device’s breakdown voltage. The company's SiC MOSFETs also outperform alternatives in these ruggedness tests, demonstrating superior gate oxide shielding and channel integrity with small lifetime degradation in parameters even after 100,000 cycles of RUIS testing.
The expanded SiC portfolio is backed by a series of SiC SPICE models, SiC driver board reference designs and a PFC Vienna reference design. All the company’s SiC products are offered in production volumes along with their associated support offerings. A variety of die and package options are available for the SiC MOSFETs and SiC diodes.
