New HEMT device properties cut conversion loss and increase reliability

EpiGaN's range of Gallium Nitride on Silicon epi-wafers meet industrial specifications for HEMT (High Electron Mobility Transistor) devices at 650V. With its cost-efficient GaN-on-Si technology EpiGaN is leading the way to define epi-wafer material quality for device properties that cut conversion loss and increase reliability, says the company. The growing demand for electronic systems that offer high speed, high temperature and high power handling capabilities has led the semiconductor industry to rethink their choice of device materials. Gallium Nitride (GaN), due to its unique characteristics such as lower On-resistance, higher breakdown voltage, higher operating temperature and higher switching frequencies, has become the preferred candidate to revolutionize future power conversion systems. EpiGaN produces advanced GaN-on-Si and GaN-on-SiC epitaxial wafers and delivers them to integrated device manufacturers to build high-performance power switching systems (up to 600V), as well as RF power devices for millimetre-wave applications. EpiGaN has patented its proven and differentiating GaN epiwafer technology to enable its customers to successfully position themselves in new and rapidly growing market segments. An important competitive advantage of EpiGaN's GaN-on-Si (up to 200mm diameter) and GaN on SiC epi-wafers produced in MOCVD (metal-organic chemical vapour deposition) reactors is that they are compatible with the existing standard Si-CMOS production infrastructure. Thus, IDMs can continue to utilize their investment in Si processing lines. This advantage arises from in-situ SiN layering, a key concept of EpiGaN's epi-wafer technology, which provides superior surface passivation and device reliability, and enables contamination-free processing. In-situ SiN structuring allows the use of pure AlN layers as a barrier material, with the resulting hetero-structures having a sheet resistance below 250ohm/sq. GaN technology is beginning to be introduced to numerous high-power applications such as industrial, consumer and server power supplies, solar, AC drive and UPS inverters, and hybrid and electric cars. Furthermore, GaN is ideally suited for RF applications such as cellular base stations, radars and cable TV infrastructure in the networking, aerospace and defence industries since it offers high breakdown strength, low noise figures and high linearity, says the company. "Even best-in-class Silicon devices are approaching their theoretical limits," said EpiGaN co-founder and CEO, Marianne Germain. "We supply industry-leading GaN-on-Si and GaN-on-SiC epi-wafers to the semiconductor industry to build the next generation of power switching and RF power systems, offering better power handling, higher conversion efficiency and lower volume and weight." PCIM Europe 19 - 21 May, 2015, Booth 6-432.