Industry's first 900V SiC MOSFET optimized for high-frequency power electronics

Mouser is now stocking the C3M family of silicon carbide power MOSFETs from Cree. The latest breakthrough in silicon carbide (SiC) power device technology and the industry's first SiC 900V MOSFET platform, the C3M Power MOSFETs are optimized for high-frequency power electronic applications. The new 900V platform enables smaller and higher-efficiency next-generation power conversion systems while reducing system cost versus silicon-based solutions, says the company. The C3M SiC power MOSFETs feature high blocking voltage of 900V with low on-resistance, which limits power loss and reduces the need for additional cooling components. The C3M0065090J features the lowest on-resistance rating (65mohm) of any MOSFET device currently available on the market, and is offered in a low-impedance D2Pak-7L surface-mount package with a Kelvin connection to help minimize gate ringing. These N-channel MOSFETs provide gate driving optimized for +15V/-5V and continuous drain currents up to +/- 36A. The fast intrinsic body diode offers a reverse-recovery charge (Qrr) of 131nC for the C3M0065090D through-hole model and 134nC for the C3M0065090J surface-mount model. The MOSFETs suit a variety of power management solutions, including switch mode power supplies (SPMS), battery chargers, solar inverters, and other industrial high-voltage applications.