New 2W DC-DC converters designed to power SiC MOSFETs
25-04-2016 |
Recom International
|
Power
To meet the tough requirements of next-generation MOSFETs, RECOM has
introduced two new 2W DC-DC converter series especially designed to power
SiC MOSFETs. One of the challenges of driving SiC MOSFETs is the high
frequency and high voltage at which they are switched. High potentials
between the control and power side of a SiC MOSFET application can wear down
isolation barriers, eventually causing them to fail.
The RxxP22005D and RKZ-xx2005D series come with 3kVDC, 4kVDC, and even
5.2kVDC isolation to ensure that the isolation barrier stands up to even the
harshest tests. Switching SiC MOSFETs requires turn-on and turn-off voltages
which are not common for other IGBT or MOSFET applications. The RxxP22005D
and RKZ-xx2005D series are available with input voltages of 5V, 12V, 15V or
24V and feature asymmetric outputs of +20V and -5V to efficiently and
effectively switch the SiC MOSFET.
The converters come fully equipped with an ultra-low parasitic capacitance
and power sharing capabilities, and they are all fully compliant to
UL-60950-1, RoHS2, and REACH, says the company.