Gate driver circuit maximises SiC MOSFET performance

The SCT2H12NZ from Rohm is now available from Digi-Key and provides the high breakdown voltage required for auxiliary power supplies in industrial equipment. Conduction loss is reduced by 8x over conventional silicon MOSFETs, contributing to greater energy efficiency. When combining with their AC/DC converter control IC designed specifically for SiC MOSFET drive (BD7682FJ-LB) it will make it possible to maximise performance and improve efficiency. This allows smaller peripheral components to be used, leading to increased miniaturisation. Compared to 1500V silicon MOSFETs used in auxiliary power supplies for industrial equipment, the device provides higher breakdown voltage (1700V) with 8x smaller ON resistance (1.15ohm). In addition, the compact TO-3PFM package maintains the creepage distance (distance measured along the surface of the insulating material) required by industrial equipment. Using this latest SiC MOSFET in combination with the company’s AC/DC converter control IC, designed specifically for SiC MOSFET drive, will make it possible to maximise performance and increase efficiency by up to 6%. At the same time heat generation will be reduced, minimising thermal countermeasures and enabling the use of smaller components.