High electron mobility transistor provides wide bandwidth capabilities
09-09-2016 |
Mouser Electronics
|
Semiconductors
Wolfspeed CGHV27030S 30W GaN high electron mobility transistor (HEMT), available from Mouser, provides wide bandwidth capabilities as well as high efficiency with high gain. Operating from DC-6.0GHz, the device offers a 21dB gain, -36dBc ACLR, and 32% efficiency at 5W PAVE. The transistor is capable of operating with either a 28V or 50V rail. The device can also apply a high degree of ADP and DPD correction.
Typical uses include telecommunications, tactical communications, land mobile radio, L-Band radar and S-Band radar applications.
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