New MOSFET increases power density and efficiency for mobile devices and consumer electronics

Vishay Intertechnology has introduced a new 30V n-channel TrenchFET Gen IV power MOSFET that delivers increased power density and efficiency for mobile devices, consumer electronics, and power supplies. Offered in the ultra-compact PowerPAK SC-70 package, the Vishay Siliconix SiA468DJ provides what is claimed to be the industry's lowest on-resistance and highest continuous drain current for 30V devices in 2mm x 2mm plastic packages. Sixty percent smaller than devices in the PowerPAK 1212, this MOSFET is one of the most compact 30V solutions available for DC-DC conversion and load switching for battery management in devices such as notebook computers, tablets, VR headsets, and DC-DC bricks; H bridges in wireless chargers; and motor drive control for drones. To reduce conduction loss and increase efficiency in these applications, the device features extremely low on-resistance of 8.4mohm at 10V and 11.4mohm at 4.5V. These values represent a 51% improvement over previous-generation solutions and a 6% improvement over the closest competing device. In addition, the MOSFET's low gate charge times on-resistance figure of merit is optimized for a diverse range of power conversion topologies. The device’s 37.8A continuous drain current is 68% higher than previous-generation devices and 50% higher than the closest competing solution. This high current rating offers an ample safety margin for applications that encounter high transient current. The MOSFET is 100% RG-tested, RoHS-compliant and halogen-free.