Small Schottky barrier diodes reduces switching loss and enables high-speed switching

ROHM Semiconductor's SiC Schottky Barrier Diodes, available now from Mouser, have a total capacitive charge (Qc) that is small, which reduces switching loss, and enables high-speed switching operations. In addition, unlike silicon-based fast recovery diodes where the trr increases along with temperature, SiC devices maintain constant characteristics, resulting in better performance. It is ideal for use as key devices in a variety of applications including inverters and chargers for EV and solar power conditioners.