eGaN FETs enhance accuracy and processing speed of ToF and flash lidar systems

EPC now offers the EPC9144, a 15V, 28A high current pulsed laser diode driver demonstration board.

In ToF systems, speed and accuracy of object detection is critical. As shown on this board, the rapid transition ability of the AEC Q101-qualified EPC2216 gives power pulses to drive laser diodes, VCSELs or LEDs up to ten times faster than an equivalent MOSFET, in a small fraction of the area, energy, and cost.

The device is provided with an interposer board. The board is a collection of breakaway 5mm x 5mm square interposer PCBs with footprints to suit different lasers, RF connectors, and a collection of other footprints created for experimentation with different loads. The employment of the interposers enables many different lasers or other loads to be mounted, permitting users to test the performance with the load demands that are appropriate to their application.

GaN is a critical factor making affordable, high-performance lidar possible. Therefore, the employment of GaN components further extends the amount of applications where increased accuracy is essential. These applications incorporate self-driving cars and other ToF applications such as facial recognition, warehouse automation, drones and topological mapping. The device can also be utilised for applications needing a ground-referenced eGaN FET, for example, in-class E or similar circuits.