MOSFET offers best in class figure of merit

Vishay has introduced the SIR680ADP, a new 80V TrenchFET Gen IV n-channel power MOSFET in the 6.15mm x 5.15mm PowerPAK SO-8 single package. Available now from TTI Europe, the device offers best in class on-resistance times gate charge FOM for MOSFET’s employed in power conversion applications of 129mOhm*nC.

The MOSFET’s on-resistance times gate charge FOM is claimed to be 12.2% lower than the closest competing product and 22.5% lower than the prior generation device, making it the most efficient solution possible for typical 48V input to 12V output DC-DC converters. The device’s specifications are fine-tuned to decrease the power losses from switching, channel conduction, and diode conduction, producing increased efficiency in selected applications, power-saving may be as high as 1W average across the load.

Typical applications include DC-DC and AC/DC conversion applications, primary-side switching, synchronous rectification, motor drives in power tools and industrial equipment, battery switching in battery management modules, telecom and data centre server power supplies, resonant switching capacitor converters, and solar micro-inverters.