Schottky diode portfolio sets new benchmark in SiC surge current robustness

UnitedSiC has released four new Junction Barrier Schottky diodes to complement its FET and JFET transistor products. With the industry’s best surge current performance, the UJ3D 1200V and 1700V devices are part of the company’s third generation of SiC Merged-PiN-Schottky diodes.

Having a VF x Qc FoM that is at least 12-15% better than diodes from other manufacturers achieve, these SiC SB diodes are highly optimised for power system designs needing elevated efficiency levels and ultra-fast switching speeds. Having a >8.8mm clearance between the anode and the cathode indicates they are better at coping with high pollution environments where voltage transients are probable to be present. In high current situations, the novel PN junction arrangement featured allows the injection of further charge carriers. Due to this, the diodes can withstand considerably higher surge currents than competing devices (up to 12x the rated current).

There is a 1700V 25A-rated option, and three 1200V devices in 10A, 20A and 50A-rated options. Fully compliant with the AEC-Q101 automotive standard, all SiC diodes are provided in a compact TO247-2L package format and in die form. Applications that will benefit most from these new SiC diodes include fast-charge EV charging access points, industrial motor drives and solar energy inverters.

As Anup Bhalla, VP Engineering at UnitedSiC, explains: “Through the unique characteristics of the UJ3D1725K2, we can provide our customers with reliable, space-saving, cost-effective SiC diodes that have substantially better performance levels and assured quality, supported by high volume manufacturing.”