High-frequency gate driver raises power efficiency while saving board space

Diodes Incorporated has launched the DGD0579U high-side and low-side gate driver. This high-frequency device, which has a built-in bootstrap diode, can drive two N-channel MOSFETs in the half-bridge configurations commonly employed for motor control and DC-DC power delivery functions. It targets high power applications, like cordless power tools, e-bikes, and autonomous robot appliances, increasing demands for heightened efficiency levels and greater compactness.

It's 100V floating high-side driver offers greater flexibility for demanding high-power applications. Short propagation delays (typically 60ns) and delay matching (within 10ns) allow higher switching speeds and decreased dead-time, producing smaller, more efficient power system implementations.

Advanced MOSFET protection mechanisms are directly incorporated into the device, enhancing system reliability, optimising board space usage, and decreasing component count compared to conventional discrete solutions. These mechanisms comprise cross conduction prevention so that the high-side and low-side MOSFETs are not on simultaneously and UVLO to address potential supply losses.

Providing an enable pin for power management and ultra-low (<1μA) standby current, the device contributes to long battery running times. Compatible with control signals from microcontrollers and PWM controller ICs, it supports TTL and CMOS logic level inputs (down to 3.3V).

The gate driver is supplied in the compact W-DFN3030-10 package, with a 3mm x 3mm footprint and a 0.75mm profile height.