N-channel MOSFETs provide increased board-level reliability

Vishay Intertechnology has released two new n-channel TrenchFET MOSFETs that increase efficiency, power density, and board-level reliability in telecom and industrial applications. To deliver these design goals, the 60V SiJH600E and 80V SiJH800E combine ultra-low on-resistance with high temperature operation to +175C and high continuous drain current handling. Their space-saving PowerPAK 8x8L package delivers board-level reliability with its bond wireless construction and gullwing leads for mechanical stress relief.

The ultra-low on-resistance of the devices — 0.65mOhm and 1.22mOhm typical at 10V, respectively — is 54% and 52% lower than same-generation devices in the PowerPAK SO-8. This converts into energy savings by reducing power losses due to conduction.

For increased power density, the devices provide continuous drain current of 373A and 288A, respectively, in a package that is 60% smaller and 57% thinner than the D²PAK. To save board space, each MOSFET can also be employed in place of two PowerPAK SO-8 devices in parallel.

With high-temperature operation to +175C, the devices supply ruggedness and reliability for synchronous rectification in power supplies, battery management, motor drive control, and power tool applications. Lead (Pb)-free, halogen-free, and RoHS-compliant, the devices are 100 % Rg and UIS tested.