Expanding 5G coverage with new RF power transistors for Massive MIMO

NXP Semiconductors offers a new series of RF power discrete solutions for 32T32R active antenna systems, using its latest proprietary gallium nitride (GaN) technology. This new series complements NXP’s existing portfolio of discrete GaN power amplifier solutions for 64T64R radios, covering all cellular frequency bands from 2.3 to 4.0 GHz. NXP now offers the most extensive RF GaN portfolio for massive multiple input, multiple output (massive MIMO) 5G radios.

Why it matters: As 5G networks continue to expand worldwide, mobile network operators are adding 32T32R radios to increase their massive MIMO coverage beyond ultra-dense urban areas into less dense urban and suburban areas. By combining 32 antennas instead of 64, coverage can be maintained more cost-effectively while maintaining the high-end 5G experience enabled by massive MIMO.

Its new series solutions produce twice the power in the same package as its 64T64R solutions, offering a smaller and lighter overall 5G connectivity solution. This pin compatibility enables network operators to scale rapidly over frequency and power levels.

“As 5G deployments continue to expand globally, network operators need to extend their coverage while maintaining performance,” said Jim Norling, vice president and general manager, High Power Solutions, Radio Power, NXP. “By offering twice the power in the same package size, NXP enables RF engineers to create base stations that are smaller, lighter and easier to deploy and conceal in urban and suburban areas.”

The new series of GaN discrete solutions are created for 10W average power at the antenna, targeting 320W radio units, with up to 58% of drain efficiency. It contains driver and final-stage transistors and leverages the company's highly linearisable RF GaN technology.