Family of ultra-efficient production-ready fast charger reference designs

Silanna Semiconductor has extended its family of silicon- and GaN-based fast charger reference designs with an all-silicon option that will significantly lower the time required to develop high-density 45W applications. Provided as a fully production-ready solution, the new RD-24 design provides everything needed to prototype and test a fully functional 45W 1C charger rapidly.

They provide fast charging performance while reducing overall energy consumption by combining the industry’s best operating efficiency with the lowest ‘vampire’ power consumption. Offering an (uncased) power density of 23.5W/inch3 from a cost-effective single PCB design, it operates with a peak efficiency of above 92% and no-load power consumption of below 20mW. Efficiency is flat over the universal input voltage range (90-265VAC).

At the heart of the latest reference design is the company's ultra-high-efficiency CO2 Smart Power SZ1131 ACF controller, which is rated for powers up to 65W in universal input designs and over 100W in PFC supported applications. This controller delivers a much higher level of integration than has previously been available by including an adaptive digital PWM controller, UHV active clamp FET, active clamp gate driver and startup regulator into a single compact device.

“OEMs are looking to reduce the time-to-market for fast charger designs that deliver optimum performance with minimum power consumption from low-cost production-ready designs”, says Ahsan Zaman, Silanna Semiconductor’s director of product marketing. “Our family of production-ready reference designs that offer high levels of efficiency and very low standby power allow these companies to quickly and easily address these requirements.”

Supplied in a 16-pin SOIC package, the device provides protection against over-temperature, over-voltage, over-current, over-power, output short circuit, and transformer core saturation faults with no requirement for further external components.