Expanded super junction MOSFET range offers four additional devices

Toshiba Electronics Europe GmbH has added four N-channel super-junction 650V power MOSFET devices to extend its DTMOSVI series. The new devices build on the success of the current devices and will mainly be employed in applications such as industrial and lighting power supplies and other applications where ultimate efficiency at a small form factor is a necessity.

The new TK090E65Z, TK110E65Z, TK155E65Z, and TK190E65Z MOSFETs achieve a 40% reduction in the RDSON x gate-drain charge (Qgd), FoM when compared to the previous DTMOS generation. This will translate into a significant decrease in switching losses over earlier devices. As a result, designs including the new devices will increase efficiency. The performance enhancement will apply to new designs and upgrades of existing designs.

All four new devices provide a drain-source voltage (VDSS) of 650V with a drain current (ID) capability up to 30A. RDSON is as low as 0.09-Ohm, and the Qgd can be as low as 7.1nC, enabling low-loss operation at high speeds. All devices are provided in industry-standard TO-220 through-hole packages.