SiC MOSFETs use enhanced features for the highest system efficiency

Infineon Technologies AG has released a new CoolSiC technology: the CoolSiC MOSFET 1200V M1H. The advanced SiC chip will be implemented in a widely expanded portfolio using the Easy module family, together with discrete packages employing .XT interconnect technology. The M1H chip provides high flexibility and is suited for solar energy systems, such as inverters that must satisfy peak demand. The chip is also excellent for applications including fast EV charging, energy storage systems and other industrial applications.

The latest advancements of the CoolSiC base technology allow a particularly larger gate operation window that enhances the on-resistance for a given die size. Simultaneously, the larger gate operation window supplies high robustness against driver- and layout-related voltage peaks at the gate, with no restrictions, even at higher switching frequencies. Together with the M1H chip technology, the related housings have been adopted in technology and package variants to allow higher power densities and more options for design engineers to improve application performance.

The device will be integrated into the Easy family to further enhance the Easy 1B and 2B modules. Also, a new product that enhances the Easy 3B module with the new MOSFET will also be released. The roll-out of new chip sizes maximises flexibility and provides the broadest industrial portfolio. With the chip, the on-resistance of the modules can be significantly improved, making the devices more reliable and efficient.

In addition to the Easy module family, the M1H portfolio includes new ultra-low on-resistance 7mOhm, 14mOhm and 20mOhm in the TO247-3 and TO247-4 discrete packages. The new devices are straightforward to design-in, mainly due to the gate voltage overshoots and undershoots with the new maximum gate-source voltage down to -10V, and come with avalanche and short-circuit capability specifications.

The new additions further enhance the optimisation potential for SiC-based applications, with fast implementation of clean energy and energy efficiency in a global world.