07-10-2022 | onsemi | Semiconductors
onsemi has released a trio of SiC-based power modules in transfer moulded technology that are aimed at use in onboard charging and HV DCDC conversion within all types of xEV. The APM32 series is the first of its kind that utilises SiC technology in a transfer moulded package to enhance efficiency and shorten charge time of xEVs and is specially designed for high-power 11-22kW OBCs.
Each of the three modules displays low conduction and switching losses, combining best-in-class thermal resistance and high voltage isolation to deal with 800V bus voltage. The improved efficiency and lower heat generation ultimately provide a more powerful OBC. One that is able to charge the xEV faster and enhance its operating range – two crucial factors for consumers.
"Our new modules employ the latest SiC technology to minimise losses and overall system volume, allowing designers to meet charging efficiency and space goals," said Fabio Necco, vice president and general manager, Automotive Power Solutions at onsemi. "By adopting the pre-configured modular format, designers are able to configure their designs faster, with significantly lower time to market and design risk."
Taking advantage of the company's end-to-end SiC supply chain capability and proven SiC MOSFETs and diodes, the modules provide high levels of reliability, and each module is serialised for complete traceability. The modules can function with junction temperatures (Tj) as high as 175C, ensuring reliability even in tough, space-constrained automotive applications.
"APM32 provides a differentiated solution for our customers by leveraging onsemi's best-in-class packaging to unleash the full capability of the leading-edge silicon carbide technology," said Simon Keeton, executive vice president and general manager, Power Solutions Group at onsemi. "In addition, we know our customers value supply assurance, which our end-to-end SiC supply chain capabilities provide."
Two modules of the APM32 series, NVXK2TR40WXT and NVXK2TR80WDT, are configured in H-bridge topology with a breakdown (V(BR)DSS) capability of 1200V, ensuring suitability for high voltage battery stacks. They are intended for use in the OBC and HV DCDC conversion stages. The third module, NVXK2KR80WDT, is configured in Vienna Rectifier topology and utilised in the PFC stage of the OBC.
All three modules are housed in a DIP, which provides low module resistance. The top cool and isolated features fulfil the most stringent automotive industry standards, and the creepage and clearance distances meet IEC 60664-1 and IEC 60950-1. Additionally, the modules are qualified for AEC-Q101 and AQG 324 for automotive use.