New LPSRAMs with embedded error-correction code and boosted reliability

Alliance Memory has extended its portfolio of LPSRAM products with new 1Mb and 4Mb devices that offer ECC. Compared to past generation devices, the new AS6CE1016A (1Mb) and AS6CE4016B (4Mb) provide better failure in time and MTTF characteristics with reduced soft error rates for more reliable operation in various consumer, communications, industrial, and medical applications.

The new LPSRAMs' ECC feature supplies 1-bit error correction per byte, making them especially suited to low-power and battery backup non-volatile memory applications. The data retention voltage for these devices is 1.5V, with a typical data retention current of 1µA for the 1Mb AS6CE1016A and 2µA for the 4Mb AS6CE4016B. The devices run from a single power supply of 2.7V to 3.6V, and all inputs and outputs are fully TTL compatible.

With the enhanced performance, the new LPSRAMs are created to satisfy the demands of a vast range of applications, such as routers and switches in communications systems; programmable logic controllers in industrial automation systems; printers, musical instruments, gaming machines, and calculators; vending machines and ATMs; and control panels, elevator systems, and fire control systems.