New silicon carbide schottky barrier diodes released

Diodes Incorporated has released its first SiC SBD. The portfolio includes the DIODES DSCxxA065 series with 11 products rated at 650V (4A, 6A, 8A, and 10A) and the DIODES DSCxx120 series with eight products rated at 1200V (2A, 5A, and 10A).

These wide-bandgap SBDs provide the benefits of greatly improved efficiency and high-temperature reliability while also reacting to market demands for smaller system running costs and low maintenance. The devices are appropriate for AC/DC, DC-DC, and DC/AC switching converters, photovoltaic inverters, UPS, and industrial motor drive applications. These devices can also be employed in various other circuits, such as boost converters for power factor correction.

The efficient performance of these SiC devices are outstanding compared to those of traditional silicon-based products, and provides power supply designers with uncompromising product performance benefits. They offer negligible switching losses due to low capacitive charge (QC) that supply high efficiency in fast switching applications. This is ideal for circuit designs with higher power density and smaller overall solution size. Low forward voltage (VF) further improves efficiency, lowering power losses and operational costs. The reduced heat dissipation assists in lowering overall system cooling budgets. High surge current capability increases robustness for greater system reliability, while exceptional thermal performance decreases build costs.

Three package options comprise surface mount TO252-2 (Type WX), through-hole TO220AC (Type WX), and ITO220AC (Type WX-NC).