Next-gen fast-switching MOSFETs and half-bridge power-integrated modules

onsemi has released its latest generation of 1200V EliteSiC SiC M3S devices, which allow power electronics designers to attain best-in-class efficiency and lower system cost. The new portfolio contains EliteSiC MOSFETs and modules that enable higher switching speeds to support the growing 800V EV OBC and energy infrastructure applications, such as EV charging, solar and energy storage systems.

Also part of the portfolio are new EliteSiC M3S devices in half-bridge PIMs with industry-leading lowest Rds(on) in a standard F2 package. Aimed at industrial applications, the modules are ideal for DC/AC, AC/DC and DC-DC high-power conversion stages. They supply higher levels of integration with optimised direct bonded copper designs to facilitate balanced current sharing and thermal distribution between parallel switches. The PIMs are created to deliver high power density in energy infrastructure, EV DC fast charging and UPS.

“onsemi’s latest generation of automotive and industrial EliteSiC M3S products will allow designers to reduce their application footprint and cooling system requirements,” said Asif Jakwani, senior vice president and general manager of the Advanced Power Division, onsemi. “This helps designers to develop high power converters with higher levels of efficiency and increased power densities.”

The automotive-qualified devices are tailored for high-power OBCs up to 22kW and high-voltage to low-voltage DC-DC converters. M3S technology has been designed particularly for high-speed switching applications and has the best-in-class FOM for switching losses.