Third generation SiC MOSFETs released with reduced switching losses

Toshiba Electronics Europe GmbH has released the TWxxxZxxxC series of ten SiC MOSFETs based on its third-generation technology. They aim to reduce losses in various industrial applications, including switching power supplies for servers and data centres, EV charging stations, PV inverters and UPS.

Devices in the series are the first of the company's SiC products to be housed in a TO-247-4L(X) package with a fourth pin. This allows providing a Kelvin connection of the signal source terminal for the gate drive, thereby reducing the parasitic inductance effects of the internal source wire and improving high-speed switching performance. Comparing the TW045Z120C with the company's existing TW045N120C (3-pin TO-247) shows an improvement in turn-on loss of approximately 40% while the turn-off loss is enhanced by around 34%.

The new series includes five devices with a drain-source (VDSS) rating of 650V and five more devices rated at 1200V for higher voltage applications. The typical drain-source on-resistance (RDS(ON)) ranges between 140mOhm and 15mOhm. Combined with low gate-drain charge (QGD) values, it will allow low losses even in high-frequency applications.

The devices can supply continuous drain currents (ID) of up to 100A.