Ultrafast low-side power MOSFET and IGBT gate drivers suit wide range of applications

10-06-2024 | TTI Europe | Power

TTI Europe now stocks the low-side IXD_600 series of gate drivers from Littelfuse designed specifically for driving MOSFETs, SiC MOSFETs, and high-power IGBTs. The single and dual output drivers can source and sink peak currents of between 2A to 30A, while producing matched voltage rise and fall times and low propagation delays. The gate driver series can be used in various high-frequency and high-power applications, including power supplies, heat pumps, motor controls and PFC circuits.

The input of each driver is virtually immune to latch-up, and proprietary circuitry eliminates cross conduction and current ‘shoot through’. The IXD_600 series can operate with supply voltages from 4.5V to 35V and is specified for an extended operating temperature range between −40C and +125C. Depending on whether the gate drivers are dual or single output devices, they can be configured as non-inverting drivers with enable, inverting drivers or as drivers with one inverting and one non-inverting.

The series is offered in various standard package options, including 8-pin DIP, 8-pin SOIC, a thermally enhanced 8-pin SOIC with exposed metal back, 8-pin DFN, 5-pin TO-263, and 5-pin TO-220.

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By Seb Springall

Seb Springall is a seasoned editor at Electropages, specialising in the product news sections. With a keen eye for the latest advancements in the tech industry, Seb curates and oversees content that highlights cutting-edge technologies and market trends.