IR emitting diode offers high typical radiant intensity and fast switching times

Vishay Intertechnology, Inc. has extended its optoelectronics portfolio by introducing a new 890nm high-speed IR emitting diode in a clear, untinted leaded plastic package. Based on surface emitter technology, the Vishay Semiconductors TSHF5211 combines an excellent -1mV/K temperature coefficient of VF with higher radiant intensity and faster rise and fall times than previous-generation devices.

The emitter diode released today offers a high typical radiant intensity of 235mW/sr at a 100mA drive current, which is 50% higher than previous-generation solutions. With fast switching times of 15ns, a low typical forward voltage of 1.5V, and a narrow ±10° angle of half intensity, the device will serve as a high-intensity emitter for smoke detectors and industrial sensors. In these applications, the device provides good spectral matching with silicon photodetectors.

RoHS-compliant, halogen-free, and Vishay Green, the device is lead (Pb)-free and capable of lead (Pb)-free soldering up to 260C.