N-channel power MOSFET lineup reduces power consumption for power supplies

Toshiba Electronics Europe GmbH has added two new 150V N-channel power MOSFET products based upon its latest generation U-MOS X-H Trench process. The TPH1100CQ5 and TPH1400CQ5 devices are designed specifically for high-performance switching power supplies, such as those employed in data centres, communication base stations, and other industrial applications.

The new devices feature a maximum drain-source voltage (VDSS) rating of 150V and drain current (ID) handling 49A (TPH1100CQ5) and 32A (TPH1400CQ5). They also feature a maximum drain-source on-resistance (RDS(ON)) of 11mOhm and 14mOhm, respectively.

The new products offer improved reverse recovery characteristics critical in synchronous rectification applications. In the case of TPH1400CQ5, the reverse recovery charge (Qrr) is decreased by approximately 73% to 27nC (typ.), and the reverse recovery time (trr) of 36ns (typ.) is approximately 45% faster compared with the company's existing TPH1400CQH, which offers the same voltage and RDS(ON). Used in synchronous rectification applications, the TPH1400CQ5 decreases the power loss of switching power supplies and helps improve efficiency. If the device is employed in a circuit that does not operate in reverse recovery mode, the power loss is equivalent to that of the TPH1400CQH.

When employed in a circuit that operates in reverse recovery mode, the new products lower spike voltages generated during switching, helping improve the designs' EMI characteristics and lowering the necessity for external filtering. The devices are housed in a versatile, surface-mount SOP Advance(N) package measuring only 4.9mm x 6.1mm x 1mm.

To support designers, the company has developed a G0 SPICE model for rapid verification of the circuit function and highly accurate G2 SPICE models for accurate reproduction of transient characteristics.