AI and EVs powered with fast SiC MOSFETs in robust TOLL package

Navitas Semiconductor extends its new portfolio of Gen-3 'Fast' (G3F) 650V SiC MOSFETs into a thermally-enhanced, rugged, high-speed, surface-mount TOLL package designed for demanding, high-power, high-reliability applications.

Combining high-power capability and best-in-class low on-resistance of 20mOhm to 55mOhm, these 650V SiC MOSFETs have been optimised for the fastest switching speed, highest efficiency, and increased power density demanded by applications such as AI data centre power supplies, EV charging and energy storage and solar solutions (ESS).

The company's GeneSiC products use proprietary 'trench-assisted planar' technology that supplies world-leading efficiency performance over the temperature range. G3F MOSFETs supply high-speed, cool-running performance that ensures up to 25C lower case temperatures and up to 3x longer life than alternative SiC products.

This latest 4.5kW AI power system reference design features the G3F45MT60L (650V 40mOhm, TOLL) G3F SiC MOSFET in an interleaved CCM-TP PFC topology. Complemented by the NV6515 (650V, 35mOhm, TOLL) GaNSafe Power IC in the LLC stage, the 4.5kW solution has a peak efficiency above 97% and, at 137 W/inch3, it is the world's highest power density AI PSU. For 400V-rated EV battery systems, G3F in TOLL is an ideal technology for OBC, DC-DC converters, and traction drives ranging from 6.6kW to 22kW.

The surface-mount TOLL package offers a 9% reduction in junction-to-case thermal resistance (RTH,J-C), 30% smaller PCB footprint, 50% lower height, and 60% smaller size than the traditional D2PAK-7L, allowing highest-power-density solutions, as demonstrated in the 4.5kW AI solution. Also, with a minimal package inductance of only 2nH, exceptional fast-switching performance and the lowest dynamic losses are achieved.