Extended MOSFET portfolio offers increased design flexibility

Nexperia announced that the ongoing expansion of its NextPower 80V and 100V MOSFET portfolio is continuing apace with the release of several new LFPAK devices in industry-standard 5mm x 6mm and 8mm x 8mm footprints. These new NextPower 80/100V MOSFETs are optimised for low RDS(on) and low Qrr to provide high efficiency and low spiking in applications including servers, power supplies, fast chargers and USB-PD and for a wide range of telecommunications, motor control and other industrial equipment. Designers can choose from 80V and 100V devices, with RDS(on) from 1.8mOhm to 15mOhm.

Many MOSFET manufacturers focus on attaining high efficiency through low QG(tot) and low QGD when benchmarking the switching performance of their devices against alternative offerings. However, through extensive research, the company has identified Qrr as being just as important due to its impact on spiking and, in turn, the amount of EMI generated during device switching. By focusing on this parameter, the company has considerably reduced the level of spiking produced by its NextPower 80/100V MOSFETs and, hence, also lowered the amount of EMI they produce. This benefits end users by reducing the probability of a costly late-stage redesign to include additional external components if their application fails EMC testing.

The on-resistance (RDSon) of these new MOSFETs has been lowered by up to 31% compared to currently available devices. The company also plans to further strengthen its NextPower 80/100V portfolio later this year with the release of an additional LFPAK88 MOSFET offering RDS(on) down to 1.2mOhm @ 80V and introducing the power-dense CCPAK1212 to the portfolio. To further support the design-in and qualification of these devices, the company offers the availability of award-winning interactive datasheets, providing engineers with comprehensive and user-friendly insights into device behaviour.