First MOSFET designed with super-short channel FET II

Magnachip Semiconductor Corporation has released its 8th-generation MXT LV MOSFET for smartphone battery protection circuits.

The company has introduced its proprietary Super-Short Channel FET II (SSCFET II) technology for the first time in the new 12V Dual N-channel MOSFET (MDWC12D024PERH). SSCFET II is its latest design technology that greatly reduces the channel length, thereby lowering the RSS(on).

Compared to the previous generation product of the same size, the RSS(on) of this product has decreased by approximately 22%. This reduction lowers power loss, shortens smartphone charging times, and lowers the internal temperature of smartphones by about 12% in fast charging mode.

With global smartphone manufacturers improving AI capabilities in smartphones, the importance of MOSFET products is growing. The company's new 12V MXT LV MOSFET features high power efficiency and is optimised for a wide range of battery protection applications in premium smartphones, particularly on-device AI smartphones.

"Following the development of Super-Short Channel FET I technology and the successful product rollout early last year, Magnachip has now introduced an upgraded Super-Short Channel FET II technology," said YJ Kim, CEO of Magnachip. "We plan to continue developing innovative high-density cell trench technology and launch advanced power solutions targeting smartphones, smartwatches and earphones throughout the second half of this year."