High-performance power module family expanded with S7 package option

SemiQ Inc. has added an S7 package to its QSiC family of 1200V, half-bridge MOSFET, and Schottky diode SiC power modules. The parts further improve power engineers' design flexibility by supplying compact, high-efficiency, high-performance options for new designs while supporting drop-in replacement in legacy systems that need more efficient operation.

This latest announcement sees the availability of a 529A MOSFET module (GCMX003A120S7B1), a 348A MOSFET module (GCMX005A120S7B1), and two low-noise SiC Schottky diode half-bridge modules (GHXS300A120S7D5 and GHXS400A120S7D5) in an S7 package with industry-standard 62mm footprints and a height of only 17mm.

The new package meets the size, weight, and power needs of demanding applications ranging from induction heaters, welding equipment, and UPS to photovoltaic and wind inverters, energy storage systems, high-voltage DC-DC converters, and battery charging systems for EVs. Along with the modules' compact form factor, high-efficiency, low-loss operation helps reduce system heat dissipation and supports the use of smaller heatsinks.

"Our aim is to provide a comprehensive portfolio of SiC technologies that allow designers to optimise the efficiency, performance and size of today's demanding applications," says Dr Timothy Han, president at SemiQ. "Adding new package option to our 1200V QSiC MOSFET and SiC diode module families further extends the choices available to designers who need to create completely new applications or who are looking to upgrade legacy systems without significant redesign."

Crafted from high-performance ceramics, the company's modules achieve exceptional performance levels, and support increased power density and more compact designs – particularly in high-frequency and high-power environments.

To ensure a stable gate threshold voltage and premium gate oxide quality for each module, the company conducts gate burn-in testing at the wafer level. In addition to the burn-in test, which contributes to mitigating extrinsic failure rates, various stress tests – including gate stress, high-temperature reverse bias (HTRB) drain stress, and high humidity, high voltage, high temperature (H3TRB) – are employed to attain the necessary automotive and industrial-grade quality standards. All parts have undergone testing surpassing 1400V.