21-08-2024 | Mouser Electronics | Power
Mouser has announced a new eBook in collaboration with onsemi, exploring using SiC semiconductors for power system design.
SiC devices are revolutionising power electronics with superior material properties, allowing more efficient, compact, and sustainable power systems. In 'Enabling a Sustainable Future with Silicon Carbide Power Electronics', onsemi explores the benefits of SiC, its applications in EVs and renewable energy, and the importance of choosing the right SiC partner. A trusted supplier of power solutions, onsemi delivers high-quality SiC devices, a reliable supply chain, and comprehensive design support.
The eBook includes convenient links to select the company's power products, such as the NTBG014N120M3P EliteSiC MOSFET. The NTBG014N120M3P is a 1200V M3P planer SiC MOSFET optimised for power applications. Planar technology works reliably with negative gate voltage drives and turns off spikes on the gate. This device is excellent for use in solar inverters, EV charging stations, energy storage systems, and switch-mode power supplies.
The NVBG1000N170M1 EliteSiC MOSFET is a 1700V M1 planar device optimised for fast switching applications. It is AEC−Q101 qualified and PPAP capable, making it ideal for use in EVs and HEVs. In EVs and HEVs, the advantages of SiC devices translate into power solutions that are smaller, lighter, and more efficient. Less energy is wasted, leading to a reduction in the number of expensive batteries needed.
The NCP51705 gate drive is designed mainly to drive SiC MOSFET transistors. To attain the lowest possible conduction losses, the driver delivers the maximum allowable gate voltage to the SiC MOSFET device. Switching losses are minimised by providing a high peak current during turn-on and turn-off.
The NCP51560 isolated dual-channel gate driver is designed for fast switching to drive power SiC MOSFET power switches. Two independent galvanically isolated gate driver channels can be used in any possible configurations of two low-side, two high-side switches or a half-bridge driver with programmable dead time. The device provides other important protection functions, such as independent under-voltage lockout for both gate drivers.
