Next-gen SiC power semis drive innovation in EV architectures

Navitas Semiconductor has released a portfolio of third-generation automotive-qualified SiC MOSFETs in D2PAK-7L (TO-263-7) and TOLL (TO-Leadless) surface-mount (SMT) packages.

The company’s proprietary ‘trench-assisted planar’ technology provides world-leading performance over temperature and delivers high-speed, cool-running operation for EV charging, traction, and DC-DC conversion. With case temperatures up to 25C lower than conventional devices, Gen-3 Fast SiC provides an operating life up to 3x longer than alternative SiC products, for high-stress EV environments.

Gen-3 Fast MOSFETs are optimised for the fastest switching speed and highest efficiency and support increased power density in EV applications such as AC compressors, cabin heaters, DC-DC converters, and OBCs. Navitas’ dedicated EV design centre has demonstrated leading-edge OBC system solutions up to 22kW with 3.5kW/litre power density and over 95.5% efficiency.

400V-rated EV battery architectures are served by the new 650V Gen-3 Fast MOSFETs featuring RDS(ON) ratings from 20mOhm to 55mOhm. The 1,200V ranges from 18mOhm to 135mOhm and is optimised for 800V systems.

Both 650V and 1,200V ranges are AEC Q101-qualified in the conventional SMT D2PAK-7L (TO-263-7) package. For 400V EVs, the 650V-rated, surface-mount TOLL package offers a 9% reduction in junction-to-case thermal resistance (RTH,J-C), 30% smaller PCB footprint, 50% lower height, and 60% smaller size than the D2PAK-7L. This allows very high-power density solutions, while minimal package inductance of only 2nH ensures excellent fast-switching performance and the lowest dynamic package losses.