SiC MOSFETs enable EV charging and industrial applications

Mouser now stocks the Gen-3 Fast (G3F) SiC MOSFETs from Navitas Semiconductor/GeneSiC. The SiC MOSFETs are developed by a proprietary ‘trench-assisted planar’ technology that delivers high-speed performance. The technology allows an extremely low RDS(ON) increase versus temperature, which results in low power losses across the complete operating range. Available in 650V and 1200V variants, these MOSFETs are optimised for faster switching speeds, higher efficiency, and increased power density demanded by various applications.

The SiC MOSFETs produce high-speed, cool-running performance, with up to 25C lower case temperature. The thermally enhanced TOLL package for the 650V variants delivers significant space and thermal management advantages. Meanwhile, the 1200V models supply the power needed for next-generation EVs and industrial applications.

The SiC MOSFETs are employed in various applications, including AI data centres, EV roadside superchargers, OBC, ESS, and solar power solutions.