MOSFET increases efficiency with the industry's lowest RDS(ON)

Vishay Intertechnology, Inc. has introduced a new 150V TrenchFET Gen V n-channel power MOSFET in the PowerPAK SO-8S (QFN 6x5) package. Compared to previous-generation devices in the PowerPAK SO-8, the Vishay Siliconix SiRS5700DP slashes overall on-resistance by 68.3% and on-resistance times gate charge – a key FOM for MOSFETs used in power conversion applications – by 15.4% while providing 62.5% lower RthJC and 179% higher continuous drain current.

With the industry's lowest on-resistance of 5.6mOhm at 10V and on-resistance times gate charge FOM of 336mOhm*nC, the device released today minimises power losses from conduction. This enables designers to boost efficiency to meet next-generation power supply needs, such as 6kW AI server power systems. Also, the extremely low 0.45C/W RthJC of the PowerPAK SO-8S package allows continuous drain current up to 144A to increase power density while providing robust SOA capability.

The SiRS5700DP is ideal for synchronous rectification, DC-DC converters, hotswap switching, and OR-ing functionality. Typical applications will include servers, edge computing, supercomputers, and data storage; telecom power supplies; solar inverters; motor drives and power tools; and battery management systems. RoHS-compliant and halogen-free, the MOSFET is 100% Rg and UIS tested and complies with IPC-9701 criteria for more reliable temperature cycling. The device's standard 6mm x 5mm footprint is fully compatible with the PowerPAK SO-8 package.