New CMOS DDR4 SDRAMs combine low power consumption with fast clock speeds

Alliance Memory has expanded its portfolio of CMOS DDR4 SDRAMs with six new 8Gb, 16Gb, and 32Gb devices in 78-ball FBGA and 96-ball FBGA packages. Providing the company's customers with higher-density options for a broad range of applications, the AS4C512M16D4B-62BCN, AS4C1G8D4B-62BCN, AS4C1G16D4A-62BCN, AS4C2G8D4A-62BCN, AS4C2G16D4-62BCN, and AS4C4G8D4-62BCN are built on a new process technology to deliver enhanced performance with lower power consumption and higher speeds and transfer rates at a lower cost.

The DDR4 SDRAMs provide a low operating voltage of +1.2V (±0.06V) to increase battery life in portable electronics such as smartphones and tablets. The devices are designed, qualified, and recommended for use in 5G and IoT designs; computing applications; surveillance, gaming, and networking storage systems; smart meters; HMI, digital signal controllers, and PNDs; and more. Built on an 8n-prefetch architecture, the devices supply fast clock speeds of 1600MHz and transfer rates of 3200MT/s.

The devices support sequential and interleave burst types with read or write burst lengths of BC4, BL8, and on the fly. An auto pre-charge function delivers a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh.

With minimal die shrinks, the DDR4 SDRAMs supply reliable drop-in, pin-for-pin-compatible replacement for numerous similar solutions, eliminating costly redesigns and part requalification. The devices are offered in the commercial (0C to +95C) temperature range and are excellent for the industrial, networking, telecommunications, gaming, and consumer markets.