New generation of GaN power discretes with superior efficiency and power density

Infineon Technologies AG has launched a new family of high-voltage discretes, the CoolGaN Transistors 650V G5, further strengthening its GaN portfolio. This new product family's target applications range from consumer and industrial SMPS such as USB-C adapters and chargers, lighting, TV, data centre, and telecom rectifiers to renewable energy and motor drives in home appliances.

The latest CoolGaN generation is developed as a drop-in replacement for the CoolGaN Transistors 600V G1, enabling rapid redesign of existing platforms. The new devices provide improved figures of merit to ensure competitive switching performance in focus applications. Compared to key competitors and previous product families from the company, the new family offer up to 50% lower energy stored in the output capacitance (Eoss), up to 60% improved drain-source charge (Qoss) and up to 60% lower gate charge (Qg). Combined, these features result in excellent efficiencies in both hard- and soft-switching applications. This leads to a significant decrease in power loss compared to traditional silicon technology, ranging from 20% to 60%, depending on the specific use case.

These benefits permit the devices to operate at high frequencies with minimal power loss, resulting in superior power density. The devices enable SMPS applications to be smaller and lighter or to increase the output power range in a given form factor.

The new high-voltage transistor product family offers various RDS(on) package combinations. Ten RDS(on) classes are available in various SMD packages, such as ThinPAK 5x6, DFN 8x8 , TOLL and TOLT.

A CoolGaN Transistors 650V G5 demo will be showcased at electronica 2024 from November 12 to 15 in hall C3, booth 502.