Switcher IC sets new benchmark for GaN technology

Power Integrations has introduced a new member of its InnoMux-2 family of single-stage, independently regulated multi-output offline power supply ICs. The new device features the industry's first 1700V GaN switch, fabricated using the company's proprietary PowiGaN technology. The 1700V rating further advances the state-of-the-art for GaN power devices, previously set by its own 900V and 1250V devices, launched in 2023. The new IC easily supports 1000VDC nominal input voltage in a flyback configuration and achieves over 90% efficiency in applications requiring one, two or three supply voltages. Each output is regulated within 1% accuracy, eradicating post regulators and improving system efficiency by approximately 10%. The new device replaces expensive SiC transistors in power supply applications such as automotive chargers, solar inverters, three-phase meters and various industrial power systems.

Radu Barsan, vice president of technology at Power Integrations, said, "Our rapid pace of GaN development has delivered three world-first voltage ratings in less than two years: 900V, 1250V, and now 1700V. Our new InnoMux-2 ICs combine 1700V GaN and three other recent innovations: independent, accurate, multi-output regulation; FluxLink, our secondary-side regulation (SSR) digital isolation communications technology; and zero voltage switching (ZVS) without an active-clamp, which all but eliminates switching losses."

"1700V rating is substantially higher than any other commercially available GaN HEMT that we are aware of," said Ezgi Dogmus, activity manager, compound semiconductors at Yole Group. "The Power GaN device market is poised to reach $2 billion by decade's end, expanding across various application spaces with potentially attractive cost advantages over SiC."