Package pushes the performance of power MOSFETs to the next level

Nexperia has launched 16 new 80V and 100V power MOSFETs in the innovative copper-clip CCPAK1212 package, providing industry-leading power density and outright performance. The innovative copper-clip design supplies high current conduction, decreased parasitic inductance, and excellent thermal performance. These features make the devices excellent for motor control, power supplies, renewable energy systems, and other power-hungry applications. The range also includes application-specific MOSFETs (ASFETs) developed for AI server hot-swap functions. With top-side and bottom-side cooling options, these MOSFETs in CCPAK provide high power density and reliable solutions. All devices are supported by JEDEC registration and the company's interactive datasheets for seamless integration.

The benchmark PSMN1R0-100ASF is a 0.99mOhm 100V power MOSFET capable of conducting 460A and dissipating 1.55KW of power, yet in a CCPAK1212 package footprint that occupies only 12mm x 12mm of board space. The PSMN1R0-100CSF provides similar statistics in a top-side cooled version.

The secret to this impressive performance is the internal construction of the devices. The "CC" in CCPAK1212 stands for copper clip, meaning that the power MOSFET silicon die is sandwiched between two pieces of copper, the drain tab on one side and the source clip on the other. With wire bonds eliminated, such an optimised assembly offers low on-resistance, reduced parasitic inductances, high maximum current ratings and excellent thermal performance.

These MOSFETs are recommended for power-hungry industrial applications where high efficiency and high reliability are critical, including BLDC motor control, SMPS, BMS and renewable energy storage. The availability of such power-capable MOSFETs in a single package decreases the necessity for parallelism, simplifying designs and offering more compact, cost-effective solutions.

The CCPAK1212 announcement also includes some new application-specific MOSFETs (ASFETs) targeting the hot-swap function in increasingly powerful AI servers. These devices provide an improved SOA, providing superior thermal stability during linear mode transitions.

Across all these applications, the availability of top-side and bottom-side cooling options provides engineers with a choice of thermal extraction techniques, which is especially helpful where dissipating heat through the PCB is impractical due to the sensitivity of other components.

"Despite offering market-leading performance, we know that some customers will be reticent to design-in a relatively new package," stated Chris Boyce, Product Group General Manager at Nexperia. "For this reason, we have registered the CCPAK1212 with the JEDEC standards organisation (reference MO-359). We followed a similar approach when we introduced the first LFPAK MOSFET package some years ago, and as a result, there are now many compatible devices available in the market. You are never on your own for long when your innovations offer genuine value to your customers," concluded Boyce.

All the new CCPAK1212 MOSFET devices are supported with a range of advanced design-in tools, including thermally compensated simulation models. Traditional PDF datasheets are supplemented with Nexperia's user-friendly interactive datasheets, which now incorporate a new 'graph-to-csv' feature that allows engineers to download, analyse and interpret the data behind each device's key characteristics. This not only streamlines the design process but enhances confidence in design choices.