High-reliability and low-loss SiC MOSFETs target energy and EV charging applications

SemiQ SiC solutions for ultra-efficient, high-performance, and high-voltage applications, has released a family of 1700V SiC MOSFETs designed to fulfil the requirements of medium-voltage high-power conversion applications, such as photovoltaic and wind inverters, energy storage, EV and road-side charging, UPS, and induction heating/welding.

The high-speed QSiC 1700V switching planar D-MOSFETs allow more compact system designs at large scale, with higher power densities and lower system costs. They feature a reliable body diode able to operate at up to 175C, with all components tested beyond 1900V and UIL avalanche tested to 600mJ.

The devices are available in a bare die form (GP2T030A170X) and as a four-pin TO-247-4L-packaged discrete (GP2T030A170H) with drain, source, driver source and gate pins. They are also available in an AEC-Q101 automotive-qualified version (AS2T030A170X and AS2T030A170H).

The MOSFETs deliver low switching and conduction losses and low capacitance and feature a rugged gate oxide for long-term reliability, with 100% of components undergoing wafer-level burn-in (WLBI) to screen out potentially weak oxide devices.

The company has also announced a series of three modules as part of the family to simplify system design, including a standard-footprint 62mm half-bridge module housed in an S3 package with an AIN insolated baseplate, as well as two SOT-227 packaged power modules.