New MOSFETs offer exceptional performance in 50% smaller package

Renesas Electronics Corporation has introduced new 100V high-power N-Channel MOSFETs that provide industry-leading high-current switching performance for applications such as motor control, BMS, power management and charging. End products include EVs, e-bikes, charging stations, power tools, data centres, UPS and more.

The company has developed a new MOSFET wafer manufacturing process (REXFET-1) that allows the new devices to drastically lower on-resistance (the resistance between the drain and source when the MOSFET is on) by 30%. The lower on-resistance contributes to much lower power loss in customer designs.

The REXFET-1 process also allows the new MOSFETs to offer a 10% reduction in Qg characteristics (the amount of charge needed to apply voltage to a gate), and a 40% reduction in Qgd (the amount of charge that needs to be injected into the gate during the "Miller Plateau" phase).

In addition to exceptional electrical characteristics, the new RBA300N10EANS and RBA300N10EHPF MOSFETs are available in industry-standard TOLL and TOLG packages that are pin-compatible with devices from other manufacturers, and 50% smaller than traditional TO-263 packages. The TOLL package also provides wettable flanks for optical inspection.

"Renesas has been a leader in the MOSFET market for many years," said Avi Kashyap, vice president of Discrete Power Solutions BU at Renesas. "As we apply our manufacturing muscle to this market, we can provide customers with superior technical products, as well as assurance of supply from multiple high-volume facilities."