Transistor in new silicon-footprint packages to drive industry-wide standardisation

GaN technology plays a crucial role in enabling power electronics to reach the highest performance levels. However, GaN suppliers have taken different approaches to package types and sizes, leading to fragmentation and a lack of multiple footprint-compatible customer sources. Infineon Technologies AG addresses this challenge by announcing the high-performance gallium nitride CoolGaN G3 Transistor 100V in RQFN 5x6 package (IGD015S10S1) and 80V in RQFN 3.3x3.3 package (IGE033S08S1).

“The new devices are compatible with industry-standard silicon MOSFET packages, meeting customer demands for a standardised footprint, easier handling and faster-time-to-market,” said Dr Antoine Jalabert, product line head for mid-voltage GaN at Infineon.

The devices will be available in a 5x6 RQFN package with a typical on-resistance of 1.1mOhm. Additionally, the 80V transistor in a 3.3x3.3 RQFN package has a typical resistance of 2.3mOhm. These transistors offer a footprint that, for the first time, allows for easy multi-sourcing strategies and complementary layouts to Silicon-based designs. The new packages, in combination with GaN, provide a low-resistance connection and low parasitics, enabling high-performance transistor output in a familiar footprint.

Moreover, this chip and package combination permits a high level of robustness in terms of thermal cycling and improved thermal conductivity, as heat is better distributed and dissipated due to the larger exposed surface area and higher copper density.

Samples of the GaN transistors IGE033S08S1 and IGD015S10S1 in RQFN packages will be available in April 2025.