Breakthrough 100kW+ technology enables GaN to address EV inverter market

Cambridge GaN Devices (CGD) has revealed more details about a solution allowing the company to address EV powertrain applications over 100kW – a market worth over $10B - with its ICeGaN GaN technology. Combo ICeGaN combines smart ICeGaN HEMT ICs and IGBTs in the same module or IPM, maximising efficiency and offering a cost-effective alternative to expensive SiC solutions.

Dr Giorgia Longobardi, founder and ceo of CGD, said: "Today, inverters for EV powertrains either use IGBTs, which are low cost but inefficient at light load conditions, or SiC devices, which are very efficient but also expensive. Our new Combo ICeGaN solution will revolutionise the EV industry by intelligently combining the benefits of GaN and silicon technologies, keeping cost low and maintaining the highest levels of efficiency which, of course, means faster charging and longer range. We are already working with Tier One automotive EV manufacturers and their supply chain partners to bring this technology advancement to the market."

The proprietary Combo ICeGaN approach uses ICeGaN and IGBT devices to operate in a parallel architecture with similar drive voltage ranges (e.g., 0-20V) and excellent gate robustness. In operation, the ICeGaN switch is very efficient, with low conduction and low switching losses at relatively low currents (light load), while the IGBT is dominant at relatively high currents (towards full load or during surge conditions). It also benefits from the high saturation currents and the avalanche clamping capability of IGBTs, and the very efficient switching of ICeGaN. At higher temperatures, the bipolar component of the IGBT will start to conduct at lower on-state voltages, supplementing the current loss in the ICeGaN. Conversely, at lower temperatures, it will take more current. Sensing and protection functions are intelligently managed to optimally drive the Combo ICeGaN and enhance the Safe Operating Area (SOA) of ICeGaN and IGBT devices.

ICeGaN technology permits EV engineers to enjoy GaN's benefits in DC-to-DC converters, onboard chargers and potentially traction inverters. Combo ICeGaN further extends the benefits of the company's GaN technology into the rich 100kW+ traction inverter market. The ICs have been proven to be very robust, and IGBTs have a proven track record in traction and EV applications. The company has also proved similar, proprietary parallel combinations of ICeGaN devices with SiC MOSFETs, but Combo ICeGaN – which is now detailed in a published IED paper – is a far more economical solution. It expects to have working demos of Combo ICeGaN at the end of this year.

Prof Florin Udrea, founder and CTO of CGD commented: "Having worked for three decades in the field of power devices, this is the first time I have encountered such a beautifully complementary technology pairing. ICeGaN is extremely fast and a star performer at light load conditions while the IGBT brings great benefits during full load, surge conditions and at high temperatures. ICeGaN provides on-chip intelligence, while the IGBT provides avalanche capability. They both embrace silicon substrates which come with cost, infrastructure and manufacturability advantages."

Visit CGD at APEC, Booth 2039, on 16-20 March 2025.