New 600V 24mOhm MOSFET improves power supply efficiency

Toshiba Electronics Europe GmbH has released an N-channel power MOSFET to meet the growing market demand for improved efficiency in power supply circuits. The new TK024N60Z1 employs the proven DTMOSVI 600V series process with a super junction structure to attain low on-resistance and decreased conduction losses. Applications include servers in data centres, SMPS for industrial equipment, and power conditioners for photovoltaic generators.

The new device has a drain-source on-resistance RDS(ON) of 0.024-Ohm (max), the lowest in the DTMOSVI 600V series. It also improves power supply efficiency, which lowers heat generation. Combined with the TO-247 package, which delivers high heat dissipation, the new device delivers good heat management characteristics.

Like other MOSFETS in the series, the device benefits from an optimised gate design and process. This lowers the value of drain-source on-resistance per unit area by approximately 13%. More importantly, drain-source on-resistance × gate-drain charge is lowered by approximately 52% compared to the company's conventional generation DTMOSIV-H series products with the same drain-source voltage rating. This means the series, including the new device, provides a better trade-off between conduction loss and switching loss, which helps improve the efficiency of switched-mode power supplies.

The company offers tools to improve further power supply efficiency that support circuit design for switched-mode power supplies. These include the G0 SPICE model, which quickly verifies circuit function, and the highly accurate G2 SPICE models that reproduce transient characteristics.

The TK024N60Z1 N-channel power MOSFET exemplifies the company's commitment to expanding the DTMOSVI series and supporting energy conservation by reducing power loss in SMPS.