Paul Whytock

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Paul Whytock is Technology Correspondent for Electropages. He has reported extensively on the electronics industry in Europe, the United States and the Far East for over thirty years. Prior to entering journalism, he worked as a design engineer with Ford Motor Company at locations in England, Germany, Holland and Belgium.

Should DRAM makers gird their fiscal loins ready for a rough ride in 2016?

Will market and political pressures spell New Year misery for the memory makers? The straight forward answer is yes and whereas extreme market fluctuations in the DRAM market are n

Insights | 22-12-2015

FPGA-based wearable device development platform breaks down size barriers

Three design imperatives when it comes to creating wearable devices for consumers are low power consumption, compact size and a list of functions that will unnerve competitors. In

Articles | 21-12-2015

FPGA-based wearable device development platform breaks down size barriers

Three design imperatives when it comes to creating wearable devices for consumers are low power consumption, compact size and a list of functions that will unnerve competitors. In

Insights | 21-12-2015

Chip breakthrough will accelerate development of self-drive cars

A new SRAM that could provide the real-time image processing capabilities for future autonomous-driving technologies has been developed by Renesas Electronics. The company has reve

Insights | 16-12-2015

Test system will open up new spectral worlds

Industry analysts reckon that by the end of this decade there will be around 50 billion connected devices operating worldwide. This Internet of Things, as this profusion of connect

Articles | 14-12-2015

Test system will open up new spectral worlds

Industry analysts reckon that by the end of this decade there will be around 50 billion connected devices operating worldwide. This Internet of Things, as this profusion of connect

Insights | 14-12-2015

InGaAs channels can cut vertical NAND costs

The integration of high mobility InGaAs as a channel material for 3D vertical NAND memory devices formed in the holes with the diameter down to 45nm has been demonstrated for the f

Articles | 08-12-2015

InGaAs channels can cut vertical NAND costs

The integration of high mobility InGaAs as a channel material for 3D vertical NAND memory devices formed in the holes with the diameter down to 45nm has been demonstrated for the f

Insights | 08-12-2015