Next-gen SiC technology for high-performance systems drives decarbonisation

Available from EBV Elektronik, Infineon Technologies has opened a new chapter in power systems and energy conversion and released the next generation of SiC MOSFET trench technology. The new Infineon CoolSiC MOSFET 650V and 1200V Generation 2 improve MOSFET key performance figures such as stored energies and charges by up to 20% compared to the past generation without compromising quality and reliability levels leading to higher overall energy efficiency and further contributing to decarbonisation.

CoolSiC MOSFET Generation 2 (G2) technology continues to employ SiC's performance capabilities by allowing lower energy loss that turns into higher efficiency during power conversion. This provides strong benefits to customers for various power semiconductor applications such as photovoltaics, energy storage, DC EV charging, motor drives, and industrial power supplies. A DC fast charging station for EVs, equipped with G2, allows for up to 10% less power loss than previous generations while allowing higher charging capacity without compromising form factors.

Traction inverters based on G2 devices can further increase EV ranges. In renewable energies, solar inverters designed with G2 make smaller sizes possible while maintaining a high-power output, resulting in a lower cost per watt.