Power MOSFETs in source-down housing upgrade

Infineon's OptiMOS power MOSFETs with 25V to 150V are available at Rutronik as an improved version in the source-down package with bottom-side cooling and centre-gate footprint. They have been optimised specifically for applications where parallel connection is required and have the lowest possible on-resistance RDS(on) on a 5mm x 6mm PCB area. The OptiMOS family also provides greatly reduced package parasitics and exceptional thermal performance. The transistors are RoHS-compliant and available in reel packaging.

The main feature of the source-down package concept is the orientation of the active side of the silicon chip to the bottom of the component. Together with the reinforced clip on the top of the silicon chip, package parasitics are greatly reduced while thermal performance is taken to the next level. State-of-the-art silicon technology with excellent FOM and maximised chip/package ratio increases current capability and ensures minimised power losses. These power MOSFETs facilitate fast switching and lower the necessity for parallel switching of components.

The MOSFETs offer minimised line losses, reduced voltage overshoots, increased maximum current carrying capacity, fast switching, and less parallel connection of components required.

Typical application areas include robotics, solar, telecommunications, low voltage drives, light electric vehicles, drones, electric tools, battery management system, and class D audio applications USB chargers.