P-channel power MOSFETs benefit from advanced trench-gate processes

Available now from Mouser, Toshiba's P-channel MOSFET offering features P-channel power MOSFETs for load switching in ultra-portable mobile computing devices and battery protection circuits for large capacity batteries. Developed using advanced trench-gate processes and packaging technologies, the P-channel MOSFETs are optimized to provide low on-resistance. These low on-resistance power MOSFETs also offer high current ratings, low capacitance, and high permissible power dissipation within a small form factor to meet the lower voltage and lower power requirements of system power supplies in portable electronics applications. The offering includes a line-up of low voltage, 1.5V operation devices with industry-leading on-resistance for applications with current ratings ranging from 1A to 5A. The design of the P-Channel MOSFETs make them ideally suited for load switching in mobile handsets, digital cameras, portable audio players and other portable electronic devices as well as battery circuit protection in large capacity batteries such as lithium-ion batteries.