ESF3 technology on 110nm platform for smartcard and MCU applications

Microchip Technology, through its Silicon Storage Technology (SST) subsidiary, has achieved qualification and availability of SST’s third generation embedded SuperFlash (ESF3) non-volatile memory on 110nm CMOS platform. SST’s embedded SuperFlash memory solution offers low power, high reliability, superior data retention and high endurance benefits to smartcard, MCU and other flash-enabled specialized IC designers with a cost-effective, embedded Flash solution. In smartcard applications, the fast erase time and low power offers a uniquely low energy envelope which is critical for enabling low power applications such as NFC and dual interface smartcards. For the first time their ESF3 technology is available to fabless and integrated device manufacturers on a highly cost-effective 8 inch 110 nm CMOS platform. This ESF3 platform is qualified for 300,000 erase and program cycles making it ideally suited for smartcard and other high-endurance IC designs. “The combination of low-power ESF3 technology on an advanced 110 nm process node opens up exciting new product opportunities, especially for the secure smartcard market,” said Vipin Tiwari, director of worldwide marketing and business development for SST. “Now customers who require low power, high-endurance embedded Flash can keep production costs down by using this mainstream 8-inch CMOS platform.”