Power conversion device ideal for higher performing applications

The Texas Instruments LMG3410 single-channel GaN power stage contains a 70mohm, 600V GaN power transistor and specialized driver in an 8mm x 8mm QFN package. The direct drive architecture is used to create a normally-off device while providing the native switching performance of the GaN power transistor. When the device is unpowered, an integrated low-voltage silicon MOSFET turns the GaN device off via its source. In normal operation, the low-voltage silicon MOSFET is held on continuously while the GaN device is gated directly from an internally-generated negative voltage supply. The integrated driver provides additional protection and convenience features. Fast over-current, over-temperature and under-voltage lockout (UVLO) protections help create a fail-safe system; the device’s status is indicated by the FAULT output. An internal 5V low-dropout regulator can provide up to 5mA to supply external signal isolators. Finally, externally-adjustable slew rate and a low-inductance QFN package minimize switching loss, drain ringing, and electrical noise generation.